? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 14 a i dm t c = 25 c, pulse width limited by t jm 56 a i a t c = 25 c 14 a e as t c = 25 c 2.5 j dv/dt i s i dm , v dd v dss , t j 150 c 20 v/ns p d t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.063 in) from case for 10s 300 c m d mounting torque 1.13/10 nm/lb.in. weight 6 g hiperfet tm power mosfets q2-class n-channel enhancement mode avalanche rated, high dv/dt, low q g low intrinsic r g , low t rr features double metal process for low gate resistance international standard package epoxy meet ul 94 v-0, flammability classification avalanche energy and current rated fast intrinsic rectifier applications dc-dc converters switched-mode and resonant-mode power supplies, >500khz switching dc choppers pulse generation laser drivers advantages easy to mount space savings high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0v, i d = 250 a 1000 v v gs(th) v ds = v gs , i d = 4ma 3.0 5.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 25 a v gs = 0v t j = 125 c 1 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25, note 1 950 m g = gate d = drain s = source tab = drain ds99073a(5/08) v dss = 1000v i d25 = 14a r ds(on) 950m t rr 300ns ixfh14n100q2 g d s to-247 (ixfh) (tab) preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixfh14n100q2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 15 28 s c iss 2800 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 287 pf c rss 100 pf t d(on) resistive switching times 12 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 10 ns t d(off) r g = 2 (external) 28 ns t f 12 ns q g(on) 83 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 20 nc q gd 40 nc r thjc 0.25 c/w r thck 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 14 a i sm repetitive, pulse width limited by t jm 56 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 300 ns q rm 0.8 c i rm 7 a i f = 25a, -di/dt = 100 a/ s, v r = 100 v ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t 300 s; duty cycle, d 2%. dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 e ? p to-247 (ixfh) outline 1 2 3 terminals: 1 - gate 2 - drain preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2008 ixys corporation, all rights reserved ixfh14n100q2 fi g . 2. extended output characteristics @ 25oc 0 3 6 9 12 15 18 21 24 27 0 3 6 9 12 15 18 21 24 27 30 v ds - volts i d - amperes v gs = 10v 8v 5v 6v 7v fi g . 3. output characteristics @ 125oc 0 2 4 6 8 10 12 14 0 4 8 1216202428 v ds - volts i d - amperes v gs = 10v 7v 5v 6v fi g . 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 0 2 4 6 8 101214 v ds - volts i d - amperes v gs = 10v 7v 5v 6v fig. 4. r ds(on) normalized to 0.5 i d25 val u e vs. junction temperature 0.4 0.8 1. 2 1. 6 2.0 2.4 2.8 3.2 -50-25 0 25 50 75 100125150 t j - degrees centigrade r d s (on) - normalized i d = 14a i d = 7a v gs = 10v fig. 6. drain current vs. case temperature 0 2 4 6 8 10 12 14 16 -50-25 0 255075100125150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) normalized to 0.5 i d25 value vs. i d 0.8 1. 0 1. 2 1. 4 1. 6 1. 8 2.0 2.2 2.4 2.6 0369121518212427 i d - amperes r d s (on) - normalized t j = 125 o c t j = 25 o c v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixfh14n100q2 ixys ref: f_14n100q2 (7f)5-28-08-b fig. 11. capacitance 10 10 0 10 0 0 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - pf c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090 q g - nanocoulombs v g s - volts v ds = 500v i d = 7a i g = 10ma fig. 7. input admittance 0 2 4 6 8 10 12 14 16 18 20 4.04.55.05.56.06.57.0 v gs - volts i d - amperes t j = 125 o c 25 o c - 40 o c fi g . 8. transconductance 0 4 8 12 16 20 24 28 0 4 8 1216202428 i d - amperes g f s - siemens t j = - 40 o c 25 o c 12 5 o c fi g . 9. source current vs. source-to-drain vo l tag e 0 5 10 15 20 25 30 35 40 45 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125 o c t j = 25 o c fi g . 12. maximum transient thermal impedance 0.001 0.01 0.1 1 0.01 0.1 1 10 100 1000 pulse width - milliseconds z (th) j c - (oc/w)
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